About this Physics and Astronomy article
Investigation of the reproducibility of electronic properties in n-type inverted silicon MOSFET surfaces by M. Roos; H. Köhler is a Physics and Astronomy article available to read on EtoBox.
## Abstract The magneto‐quantum oscillations in the channel resistance as a function of the magnetic field or the gate voltage are used to investigate the reproducibility of the electronic properties in n‐type inverted silicon surface channels depending on the history of the same sample. A model is proposed in order to explain the variable data up to __n__~s~ ≈︁ 1.5 × 10^12^ cm^−2^ for (100) surfaces, where the lowest electric subband edges are less distant than supposed before. The additional assumption of elastic intervalley scattering at low electron concentrations and tunnelling of electrons into traps in the SiO~2~ near the Si/SiO~2~ interface allows a thorough discussion of all the properties in the “activated” and “metallic” conduction range. The variable data seem to depend on the density and distribution of trapped electrons deep inside the SiO~2~.
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- Author
- M. Roos; H. Köhler
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)
- Published
- 1979
- Language
- EN
- ISBN
- 9782220940212
- Field
- Physics and Astronomy (Physical Sciences)