Skip to content

Opening book details…

About this Materials Science article

Electrical spin injection from an n-type ferromagnetic semiconductor into a III–V device heterostructure by Hanbicki, Aubrey T.; Sullivan, James M.; van 't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.; Kioseoglou, George is a Materials Science article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Materials Science.

Author
Hanbicki, Aubrey T.; Sullivan, James M.; van 't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.; Kioseoglou, George
Publisher
Nature Publishing Group; Springer Science and Business Media LLC (ISSN 1476-1122)
Published
2004
Field
Materials Science (Physical Sciences)

More by Hanbicki, Aubrey T.; Sullivan, James M.; van 't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.; Kioseoglou, George

Browse all works by Hanbicki, Aubrey T.; Sullivan, James M.; van 't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.; Kioseoglou, George