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The document discusses the development and measurement challenges of a GaN-FET Power Optimizer, highlighting the benefits of using GaN-MOSFETs for efficiency and durability. It compares measurement techniques using passive and isolated probes, concluding that isolated probes provide more accurate results for fast switching systems. The findings emphasize the importance of proper calibration and design considerations to achieve optimal performance in power optimization applications.

Author

jopodi1022

Language

EN