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What is Etching Process Development For SiC CMOS about?

This thesis by Weston Reed Renfrow focuses on the development of etching processes for Silicon Carbide (SiC) CMOS technology, which is crucial for applications in extreme environments where traditional silicon devices fail. The research investigates various etching methods, particularly chlorine-based inductively coupled plasma (ICP) etching, and finds that specific gas compositions can significantly affect etch rates and quality. The study concludes that SiC

Author
Aditya
Language
EN