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Dynamic radiative properties of the Cu(In,Ga)Se~2~ layer during the co‐evaporation process by J. Schöldström; U. Zimmermann; M. Edoff is a Engineering article available to read on EtoBox.

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## Abstract A study of the wavelength‐integrated emissivity has been performed on the optical stack Cu~__x__~Se/Cu(In,Ga)Se~2~/Mo. The wavelength interval used in the study was 2–20 μm, which covers 95% of the radiated heat from a black body heated to 500°C. Substrate temperatures around 500°C are commonly used in production of Cu(In,Ga)Se~2~ thin films for solar cells. The integrated emissivity was obtained from directional reflectivity measurements of experimental samples with different thicknesses of the Cu~__x__~Se layers. It was subsequently compared to the emissivity from numerical simulations based on newly obtained values of the refractive index values for Cu(In,Ga)Se~2~ and Cu~__x__~Se at these wavelengths. Good agreement was found between the measured and simulated values. At a Cu(In,Ga)Se~2~ thickness of 1.8 μm and a Mo thickness of 400 nm, a maximum in the integrated emissivity was found for a Cu~__x__~Se thickness of 30 nm. The results are valuable input into understanding the dynamics of the change in emissivity between Cu‐rich Cu(In,Ga)Se~2~ with segregated Cu~__x__~Se and Cu‐poor single phase Cu(In,Ga)Se~2~ at temperatures around 500°C. In co‐evaporation of Cu(In,Ga

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Author

J. Schöldström; U. Zimmermann; M. Edoff

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley (ISSN 1062-7995)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)