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About this Engineering article
Gate-on-germanium source tunnel field-effect transistor enabling sub-0.5-V operation by Mallik, Abhijit; Chattopadhyay, Avik; Omura, Yasuhisa is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Mallik, Abhijit; Chattopadhyay, Avik; Omura, Yasuhisa
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)
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