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Second Order Effects in MOSFET Design by b23495 is a document available to read on EtoBox.
The document discusses second order effects in MOSFETs, including channel length modulation, body effect, and sub-threshold conduction, along with their impact on the small signal model. It provides equations and models to illustrate these effects and compares the characteristics of BJTs and MOSFETs. The lecture aims to enhance understanding of these phenomena in CMOS analog IC design.
- Author
- b23495
- Language
- EN