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About this Engineering article
Active doping instability in n+−p silicon surface avalanche diodes: S. Manzini. Solid-State Electronics, 38, 2, 331 (1995) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 1996
- Language
- EN
- Field
- Engineering (Physical Sciences)