Opening book details…
About this Engineering article
Effects of Surface Preparation on Epitaxial GaN on 6H-SIC Deposited Via Mocvd by Xie, Z. Y.; Wei, C. H.; Li, L. Y.; Edgar, J. H.; Chaudhuri, J.; Ignatiev, C. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Xie, Z. Y.; Wei, C. H.; Li, L. Y.; Edgar, J. H.; Chaudhuri, J.; Ignatiev, C.
- Publisher
- Cambridge University Press; Cambridge University Press (Materials Research Society); Cambridge University Press (CUP) (ISSN 0272-9172)
- Published
- 1998
- Language
- EN
- Field
- Engineering (Physical Sciences)
More by Xie, Z. Y.; Wei, C. H.; Li, L. Y.; Edgar, J. H.; Chaudhuri, J.; Ignatiev, C.
Browse all works by Xie, Z. Y.; Wei, C. H.; Li, L. Y.; Edgar, J. H.; Chaudhuri, J.; Ignatiev, C.