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Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells by Averkiev, N. S.; Golub, L. E.; Gurevich, A. S.; Evtikhiev, V. P.; Kochereshko, V. P.; Platonov, A. V.; Shkolnik, A. S.; Efimov, Yu. P. is a scholarly article available to read on EtoBox.

What is Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells about?

Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well structures. It is shown that the Rashba spin-orbit splitting is about four times stronger than the Dresselhaus splitting in the studied structure.

Author
Averkiev, N. S.; Golub, L. E.; Gurevich, A. S.; Evtikhiev, V. P.; Kochereshko, V. P.; Platonov, A. V.; Shkolnik, A. S.; Efimov, Yu. P.
Published
2006
Language
EN

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