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About this Materials Science article
Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations by Yoon, Young Jun (author);Eun, Hye Rim (author);Seo, Jae Hwa (author);Kang, Hee Sung (author);Lee, Seong Min (author);Lee, Jeongmin (author);Cho, Seongjae (author);Tae, Heung Sik (author);Lee, Jung Hee (author);Kang, In Man (author) is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Yoon, Young Jun (author);Eun, Hye Rim (author);Seo, Jae Hwa (author);Kang, Hee Sung (author);Lee, Seong Min (author);Lee, Jeongmin (author);Cho, Seongjae (author);Tae, Heung Sik (author);Lee, Jung Hee (author);Kang, In Man (author)
- Publisher
- American Scientific Publishers
- Published
- 2015
- Language
- EN
- Field
- Materials Science (Physical Sciences)