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About this Engineering article
Effect of unequal ionization rates on GaAs IMPATT device admittance by Laton, R.W.; Sudbury, R.W. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Laton, R.W.; Sudbury, R.W.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1974
- Field
- Engineering (Physical Sciences)