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The document summarizes research on the effects of gamma radiation on MOS structures with aluminum (Al), tellurium dioxide (TeO2), and n-type silicon (n-Si) layers. Key findings include: 1) Capacitance and conductance values increased with higher radiation doses in the accumulation region, attributed to radiation-induced surface states at the TeO2/Si interface. 2) At high doses, capacitance and conductance decreased due to radiation damage inside the TeO2 film forming easy conduction paths. 3) For a 2
- Author
- sionl
- Language
- EN