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About this Engineering article
Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy by Murrell, M. P. ;Welland, M. E. ;O’Shea, S. J. ;Wong, T. M. H. ;Barnes, J. R. ;McKinnon, A. W. ;Heyns, M. ;Verhaverbeke, S. is a Engineering article available to read on EtoBox.
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- Author
- Murrell, M. P. ;Welland, M. E. ;O’Shea, S. J. ;Wong, T. M. H. ;Barnes, J. R. ;McKinnon, A. W. ;Heyns, M. ;Verhaverbeke, S.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1993
- Field
- Engineering (Physical Sciences)