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Characterization of interface of Al–Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry by Chikara Ichihara; Nobuyuki Kawakami; Satoshi Yasuno; Aya Hino; Kazuhisa Fujikawa; Akira Kobayashi; Mototaka Ochi; Hiroshi Gotoh; Toshihiro Kugimiya is a Engineering article available to read on EtoBox.

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High-resolution Rutherford backscattering spectrometry (HRBS) in combination with grazing angle argon sputtering was carried out to characterize the interface of aluminum-nickel (Al-Ni) alloy and amorphous-silicon films in a thin film transistor (TFT) for liquid crystal display (LCD). After thinning the top Al-Ni layer by a 1-keV Ar sputtering, the sensitivity of the interface oxygen was improved to be twice higher than that before sputtering. The results revealed that the oxygen at the interface relates to the contact characteristics.

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Author

Chikara Ichihara; Nobuyuki Kawakami; Satoshi Yasuno; Aya Hino; Kazuhisa Fujikawa; Akira Kobayashi; Mototaka Ochi; Hiroshi Gotoh; Toshihiro Kugimiya

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0968-4328)

Published

2009

Language

EN

Field

Engineering (Physical Sciences)