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About this Engineering article
Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs by Dankowski, S. U.; Streb, D.; Ruff, M.; Kiesel, P.; Kneissl, M.; Knüpfer, B.; Döhler, G. H.; Keil, U. D.; So̸renson, C. B.; Verma, A. K is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Dankowski, S. U.; Streb, D.; Ruff, M.; Kiesel, P.; Kneissl, M.; Knüpfer, B.; Döhler, G. H.; Keil, U. D.; So̸renson, C. B.; Verma, A. K
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1996
- Language
- EN
- Field
- Engineering (Physical Sciences)