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Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation by S. Sudirgo; R.P. Nandgaonkar; B. Curanovic; J.L. Hebding; R.L. Saxer; S.S. Islam; K.D. Hirschman; S.L. Rommel; S.K. Kurinec; P.E. Thompson; N. Jin; P.R. Berger is a Engineering article available to read on EtoBox.

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The first demonstration of the monolithic integration of CMOS and Si/SiGe resonant interband tunnel diodes (RITD) with negative differential resistance (NDR) is reported in this paper. The Si/SiGe RITDs exhibited a peak-tovalley current ratio (PVCR) up to 2.8 and peak current density (J p ) of 0.26 kA/cm 2 at room temperature. This study focused on the utilization of a pair of tunnel diodes connected in series to form a latch. Employing a FET to supply current into the latch, a RITD/NMOS monostable-bistable transition logic element (MOBILE) was realized. The latch exhibited a voltage swing of 84% at an applied supply voltage of 0.5 V. This logic element enables low voltage operation for high density circuit design of embedded memory.

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Author

S. Sudirgo; R.P. Nandgaonkar; B. Curanovic; J.L. Hebding; R.L. Saxer; S.S. Islam; K.D. Hirschman; S.L. Rommel; S.K. Kurinec; P.E. Thompson; N. Jin; P.R. Berger

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2004

Language

EN

Field

Engineering (Physical Sciences)