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About this Materials Science article
Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device by Shi, Yuanyuan; Zhou, Qi; Zhang, Anbang; Zhu, Liyang; Shi, Yu; Chen, Wanjun; Li, Zhaoji; Zhang, Bo is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Shi, Yuanyuan; Zhou, Qi; Zhang, Anbang; Zhu, Liyang; Shi, Yu; Chen, Wanjun; Li, Zhaoji; Zhang, Bo
- Publisher
- Springer-Verlag; Springer (Biomed Central Ltd.); Springer Verlag; Seacaucus NJ: Springer Verlag New York, 2006-; Springer Science and Business Media LLC; Society for Mining, Metallurgy and Exploration Inc. (ISSN 1931-7573)
- Published
- 2017
- Language
- EN
- Field
- Materials Science (Physical Sciences)