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Morphological study of non‐polar (11‐20) GaN grown on r‐plane (1‐102) sapphire by C. F. Johnston; M. J. Kappers; J. S. Barnard; C. J. Humphreys is a Engineering article available to read on EtoBox.

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## Abstract In order to grow high quality non‐polar GaN‐based LED structures it is important to understand the mechanism of GaN growth by MOVPE on r‐plane (1‐102) sapphire. In this work, (11‐20) GaN epilayers have been characterised at three stages of growth using high resolution X‐ray diffraction (HRXRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). Following nucleation, 3D islands were grown, then the V/III ratio was lowered and the islands coalesced to form a smooth film. A series of symmetric XRD ω‐scans obtained at different azimuthal angles revealed an anisotropy in the layers with respect to the [1‐100] and [0001] axes. AFM scans show that the islands are elongated along the [0001] axis. TEM has been used to analyse the layers further. A high density of stacking faults (5x10^5^ cm^–1^) and threading dislocations (4x10^10^ cm^–2^) was found in the film with 120 s high V/III growth followed by low V/III growth. Defects were found to run perpendicular and at ∼60 degrees to the sapphire interface in uncoalesced “island” samples. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

C. F. Johnston; M. J. Kappers; J. S. Barnard; C. J. Humphreys

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)