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About this Engineering article
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology by Paidi, V.; Shouxuan Xie, ; Coffie, R.; Moran, B.; Heikman, S.; Keller, S.; Chini, A.; DenBaars, S.P.; Mishra, U.K.; Long, S.; Rodwell, M.J.W. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Paidi, V.; Shouxuan Xie, ; Coffie, R.; Moran, B.; Heikman, S.; Keller, S.; Chini, A.; DenBaars, S.P.; Mishra, U.K.; Long, S.; Rodwell, M.J.W.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9480)
- Published
- 2003
- Language
- EN
- Field
- Engineering (Physical Sciences)