About this Engineering article
A comparison of electron sensitive single, Bi-, and tri-level resist schemes for the fabrication of sub-micron gate structures in doped polysilicon by H. Willis; A.G. Brown; S.J. Till; S.H. Mortimer is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- H. Willis; A.G. Brown; S.J. Till; S.H. Mortimer
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)
- Published
- 1987
- Language
- EN
- Field
- Engineering (Physical Sciences)