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About this Materials Science article
Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing by Huang, Shyh-Jer; Chou, Cheng-Wei; Su, Yan-Kuin; Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long; Ruan, Jian-Long is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Huang, Shyh-Jer; Chou, Cheng-Wei; Su, Yan-Kuin; Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long; Ruan, Jian-Long
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 2017
- Language
- EN
- Field
- Materials Science (Physical Sciences)