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This document discusses a study of twisted double bilayer graphene (TDBG), which consists of two AB-stacked graphene bilayers that are twisted relative to each other. The authors find using density functional theory calculations that TDBG is semiconducting, with a band gap that depends on the twist angle and can be tuned with an external electric field. For large twist angles, the band gap is around 40 meV, decreasing for smaller angles, due to competing effects of surface charge transfer between layers and

Author

ROJITAS90

Language

EN