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Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate by Wrobel, Jaroslaw; Umana-Membreno, Gilberto; Boguski, Jacek; Sztenkiel, Dariusz; Michalowski, Pawel Piotr; Martyniuk, Piotr; Faraone, Lorenzo; Wrobel, Jerzy; Rogalski, Antoni is a scholarly article available to read on EtoBox.

What is Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate about?

High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most populated holelike channel below 55 K. The multilayer model concluded from the QMSA results has been compared with nextnano simulation.

Author

Wrobel, Jaroslaw; Umana-Membreno, Gilberto; Boguski, Jacek; Sztenkiel, Dariusz; Michalowski, Pawel Piotr; Martyniuk, Piotr; Faraone, Lorenzo; Wrobel, Jerzy; Rogalski, Antoni

Published

2019

Language

EN