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This review discusses the significance of morphotropic phase boundary (MPB) in HfO2-based ferroelectrics as a promising solution for advanced high-k dielectrics in dynamic random-access memory (DRAM) technology. The authors highlight the challenges of developing high-performance, cost-effective memory solutions while detailing the principles and material parameters of MPB-based high-k dielectrics. The paper emphasizes the need for further research into HfO2-based ferroelectrics to fully leverage their poten

Author

hicret

Language

EN