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Correlation between Optical and Structural Characteristics in Coaxial GaInN/GaN Multiple Quantum Shell Nanowires with AlGaN Spacers by Lu, Weifang; Miyamoto, Yoshiya; Okuda, Renji; Ito, Kazuma; Sone, Naoki; Iwaya, Motoaki; Tekeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu is a Engineering article available to read on EtoBox.
What is Correlation between Optical and Structural Characteristics in Coaxial GaInN/GaN Multiple Quantum Shell Nanowires with AlGaN Spacers about?
High crystalline quality coaxial GaInN/GaN multiple quantum shells (MQSs) grown on dislocation-free nanowires are highly in demand for efficient white-/micro-light-emitting diodes (LEDs). Here, we propose an effective approach to improve the MQS quality during the selective growth by metal-organic chemical vapor deposition. By increasing the growth temperature of GaN barriers, the cathodoluminescent intensity yielded enhancements of 0.7 and 3.9 times in the samples with GaN and AlGaN spacers, respectively. Using an AlGaN spacer before increasing the barrier temperature, the decomposition of GaInN quantum wells was suppressed on all planes, resulting in a high internal quantum efficiency up to 69%. As revealed by scanning transmission electron microscopy (STEM) characterization, the high barrier growth temperature allowed to achieve a clear interface between GaInN quantum wells and GaN quantum barriers on the -, -, and -planes of the nanowires. Moreover, the correlation between the In incorporation and structure features in MQS was quantitatively assessed based on the STEM energy-dispersive X-ray spectroscopy mapping and line-scan profiles of In and Al fractions. Ultimately, it was
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- Author
- Lu, Weifang; Miyamoto, Yoshiya; Okuda, Renji; Ito, Kazuma; Sone, Naoki; Iwaya, Motoaki; Tekeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
- Publisher
- American Chemical Society; American Chemical Society (ACS) (ISSN 1944-8244)
- Published
- 2020
- Language
- EN
- Field
- Engineering (Physical Sciences)