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This document discusses semiconductor p-n junction diodes and related concepts over several sections. It presents exercises calculating properties of a p-n junction formed between silicon doped with phosphorus (n-type) and silicon doped with indium (p-type), including contact potential, carrier concentrations, depletion region widths, and more. Additional exercises calculate current, voltage drops, and resistances in diode circuits. The final section indicates that silicon will absorb infrared light due to

Author

Dgm Cb Gfm Dg

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EN