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This document summarizes research characterizing and developing compact models for nanometer CMOS transistors at deep cryogenic temperatures down to 100 mK. Two technologies - a 0.16-μm and 40-nm process - were experimentally characterized at 4K and below. Based on understanding the device physics, compact models using MOS11 and PSP were developed that accurately reproduce both DC and AC device behavior, as validated by comparisons to ring oscillator and low-noise amplifier measurements at 4K. This work pro

Author

rakshit ya

Language

EN