Opening book details…
About this Physics and Astronomy article
Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress by Zheng, Qi-Wen; Cui, Jiang-Wei; Yu, Xue-Feng; Guo, Qi; Zhou, Hang; Ren, Di-Yuan is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Zheng, Qi-Wen; Cui, Jiang-Wei; Yu, Xue-Feng; Guo, Qi; Zhou, Hang; Ren, Di-Yuan
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0256-307X)
- Published
- 2014
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)
More by Zheng, Qi-Wen; Cui, Jiang-Wei; Yu, Xue-Feng; Guo, Qi; Zhou, Hang; Ren, Di-Yuan
Browse all works by Zheng, Qi-Wen; Cui, Jiang-Wei; Yu, Xue-Feng; Guo, Qi; Zhou, Hang; Ren, Di-Yuan