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Structural investigation of hierarchically self-assembled GaAs/AlGaAs quantum dots by A. Lenz; R. Timm; H. Eisele; L. Ivanova; D. Martin; V. Voßebürger; A. Rastelli; O. G. Schmidt; M. Dähne is a Physics and Astronomy article available to read on EtoBox.
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## Abstract Recent investigations of self‐organized unstrained inverted GaAs/AlGaAs quantum dots, prepared by a combination of Stranski–Krastanov growth mode and an __in situ__ etching technique, show GaAs quantum dots with large confinement energy and high size homogeneity. Here we present first cross‐sectional scanning tunneling microscopy data of these quantum dots, characterized by a lateral extension of about 35 nm, heights of about 5–6 nm, and a reversed truncated pyramidal shape. We further observe a decomposition of the AlGaAs host layers and a roughening of the AlGaAs/GaAs interfaces. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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- Author
- A. Lenz; R. Timm; H. Eisele; L. Ivanova; D. Martin; V. Voßebürger; A. Rastelli; O. G. Schmidt; M. Dähne
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)
- Published
- 2006
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)