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About this Engineering article
Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses by Emelianov, V.V.; Zebrev, G.I.; Ulimov, V.N.; Useinov, R.G.; Belyakov, V.V.; Pershenkov, V.S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Emelianov, V.V.; Zebrev, G.I.; Ulimov, V.N.; Useinov, R.G.; Belyakov, V.V.; Pershenkov, V.S.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9499)
- Published
- 1996
- Language
- EN
- Field
- Engineering (Physical Sciences)