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Potential Profiles in Poly(3-hexylthiophene) Field Effect Transistor by Daisuke Tanimura; Makoto Yano; Wataru Takashima; Keiichi Kaneto is a Materials Science article available to read on EtoBox.

What is Potential Profiles in Poly(3-hexylthiophene) Field Effect Transistor about?

A potential profile along the channel in a conducting polymer field effect transistor (FET) has been measured directly using micro-manipulator with potential probing tip. The FET was fabricated with a head-tail coupled poly(3-hexylthiophene) as the channel semiconductor on a SiO 2 /n-Si substrate. The potential profile along the channel shows almost flat potential being equal to the source until near the drain. Then the channel potential abruptly increases near the drain, which has been observed for both linear and saturation regions in the drain current-drain voltage curves. The results are discussed in terms of carrier injection at the drain electrode and pinch off characteristics.

Who reads Potential Profiles in Poly(3-hexylthiophene) Field Effect Transistor?

Author

Daisuke Tanimura; Makoto Yano; Wataru Takashima; Keiichi Kaneto

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 1567-1739)

Published

2005

Language

EN

Field

Materials Science (Physical Sciences)