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About this Engineering article
Ru-Induced Deep Levels in Ru/4H-SiC Epilayer Schottky Diodes by Deep Level Transient Spectroscopy by Nguyen, Khai V.; Mandal, Krishna C. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Nguyen, Khai V.; Mandal, Krishna C.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 2162-8769)
- Published
- 2015
- Field
- Engineering (Physical Sciences)