About this scholarly article

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 21 January 2012)] Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - Characteristics of bulk InGaAsN and InGaAsSbN material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application by Kim, TaeWan; Garrod, Toby J.; Kim, Kangho; Lee, Jaejin; Mawst, Luke J.; Kuech, T. F.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.; Freundlich, Alexandre; Guillemoles, Jean-Francois F. is a scholarly article available to read on EtoBox.

Author

Kim, TaeWan; Garrod, Toby J.; Kim, Kangho; Lee, Jaejin; Mawst, Luke J.; Kuech, T. F.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.; Freundlich, Alexandre; Guillemoles, Jean-Francois F.

Publisher

SPIE

Published

2012