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About this Engineering article
Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications by Murugapandiyan, P.; Mohanbabu, A.; Lakshmi, V. Rajya; Wasim, Mohammed; Sundaram, K. Meenakshi is a Engineering article available to read on EtoBox.
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- Author
- Murugapandiyan, P.; Mohanbabu, A.; Lakshmi, V. Rajya; Wasim, Mohammed; Sundaram, K. Meenakshi
- Publisher
- Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)
- Published
- 2019
- Field
- Engineering (Physical Sciences)