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About this Engineering article
High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density by Gogova, Daniela; Larsson, Henrik; Kasic, Alexander; Yazdi, Gholam Reza; Ivanov, Ivan; Yakimova, Rositza; Monemar, Bo; Aujol, Eric; Frayssinet, Eric; Faurie, Jean-Pierre; Beaumont, Bernard; Gibart, Pierre is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Gogova, Daniela; Larsson, Henrik; Kasic, Alexander; Yazdi, Gholam Reza; Ivanov, Ivan; Yakimova, Rositza; Monemar, Bo; Aujol, Eric; Frayssinet, Eric; Faurie, Jean-Pierre; Beaumont, Bernard; Gibart, Pierre
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)