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Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiNx by Y.B Hahn; J.W Lee; K.D Mackenzie; D Johnson; S.J Pearton; F Ren is a Engineering article available to read on EtoBox.

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AbstractÐInductively coupled plasma-chemically vapor deposited (ICP-CVD) SiN x was grown on Si substrates using a SiH 4 /NH 3 /He chemistry at 1508C. The in ̄uence of source power, chamber pressure, rf chuck power and percentage SiH 4 on the wet (in BOE) and dry (in ICP SF 6 /Ar discharges) etch rates of the SiN x was investigated. The dry etch rates are found to strongly increase with stress in the ®lm above a threshold of H500 MPa, while the wet etch rates increase rapidly with source power, chamber pressure and hydrogen content.

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Author

Y.B Hahn; J.W Lee; K.D Mackenzie; D Johnson; S.J Pearton; F Ren

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)