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About this Materials Science article
Modification of a Polymer Gate Insulator by Zirconium Oxide Doping for Low Temperature, High Performance Indium Zinc Oxide Transistors by Son, Byeong-Geun; Je, So Yeon; Kim, Hyo Jin; Jeong, Jae Kyeong is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Son, Byeong-Geun; Je, So Yeon; Kim, Hyo Jin; Jeong, Jae Kyeong
- Publisher
- The Royal Society of Chemistry; Royal Society of Chemistry; Cambridge: RSC Publishing; Royal Society of Chemistry (RSC) (ISSN 2046-2069)
- Published
- 2014
- Language
- EN
- Field
- Materials Science (Physical Sciences)
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