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Hall Effect in P-Doped Germanium by Michela is a document available to read on EtoBox.
1) The Hall effect was used to measure the charge carrier density and mobility in a sample of p-doped germanium. 2) Values of 1.0 ± 0.1 × 1021 m-3 and 0.17 ± 0.02 m2 V-1 s-1 were obtained for the charge carrier density and mobility, respectively, which are consistent with literature values. 3) The positive sign of the Hall voltage indicates the charge carriers are holes, as expected for p-doped germanium.
- Author
- Michela
- Language
- EN