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About this Materials Science article
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor by Kim, Bo Gyeong; Seo, Jae Hwa; Yoon, Young Jun; Cho, Min Su; Yu, Eunseon; Lee, Jung-Hee; Cho, Seongjae; Kang, In Man is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Kim, Bo Gyeong; Seo, Jae Hwa; Yoon, Young Jun; Cho, Min Su; Yu, Eunseon; Lee, Jung-Hee; Cho, Seongjae; Kang, In Man
- Publisher
- American Scientific Publishers (ISSN 1533-4880)
- Published
- 2018
- Field
- Materials Science (Physical Sciences)