About this scholarly article

2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Localized degradation and breakdown study of cerium-oxide high-к gate dielectric material using scanning tunneling microscopy by Shubhakar, K.; Pey, K.L.; Kushvaha, S.S.; O'Shea, S.J.; Bosman, M.; Kouda, M.; Kakushima, K.; Iwai, H. is a scholarly article available to read on EtoBox.

Author

Shubhakar, K.; Pey, K.L.; Kushvaha, S.S.; O'Shea, S.J.; Bosman, M.; Kouda, M.; Kakushima, K.; Iwai, H.

Publisher

IEEE

Published

2010

Language

EN