About this Engineering article
The ammonia sensitivity of PdIr alloy-gate mos field-effect transistor by Zhang Weixin; Zhao Lingjuan is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Zhang Weixin; Zhao Lingjuan
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0250-6874)
- Published
- 1989
- Language
- EN
- Field
- Engineering (Physical Sciences)