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The document discusses techniques for minimizing short channel effects in MOSFETs such as using shallow source/drain regions with extensions to reduce junction depth while limiting increases in parasitic resistance. It also describes the use of lightly doped drain structures to reduce peak electric fields and hot carrier effects at the expense of higher parasitic resistance. Minimizing source and drain parasitic resistances is important because they can lower the saturation current and effective voltages in

Author

mabhat

Language

EN