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About this Engineering article
Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation by Takakura, K.; Putcha, V.; Simoen, E.; Alian, A. R.; Peralagu, U.; Waldron, N.; Parvais, B.; Collaert, N. is a Engineering article available to read on EtoBox.
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- Author
- Takakura, K.; Putcha, V.; Simoen, E.; Alian, A. R.; Peralagu, U.; Waldron, N.; Parvais, B.; Collaert, N.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2020
- Field
- Engineering (Physical Sciences)