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Physical Cause and Impact of Negative Capacitance Effect in Ferroelectric P(VDF-TrFE) Gate Stack and Its Application to Landau Transistor by Khoirom Johnson Singh; Nitanshu Chauhan; Anand Bulusu; Sudeb Dasgupta is a Engineering article available to read on EtoBox.

What is Physical Cause and Impact of Negative Capacitance Effect in Ferroelectric P(VDF-TrFE) Gate Stack and Its Application to Landau Transistor about?

A novel approach to overcome Boltzmann's tyranny is to exploit the negative capacitance (NC) effect found naturally in many ferroelectric (FE) materials. We apply a set of coupled equations based on electrostatics, Kirchoff's law, and a well-calibrated Ginzburg-Landau-Khalatnikov technology computeraided design (TCAD) model to simulate an organic FE poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)]-based resistor metal-FE-metal (R-MFM) series circuit and a Landau transistor (LT) exhibiting sub-60 mV/decade subthreshold swing (SS). TCAD simulation parameters for P(VDF-TrFE) are derived from the reported experimental polarization versus voltage characteristics using Landau theory. Unlike oxide FEs, the P(VDF-TrFE)-based R-MFM series circuit can exploit the NC effect at a lower supply voltage (V G ) of ±0.5 V with little energy dissipation of ∼2.7 fJ through R. Our simulation results show an 84.89% reduction in the P(VDF-TrFE)'s coercivity concerning the oxide FE. We show that the underlying mechanism of the NC effect is directly related to FE polarization (FE-P) switching. The NC effect occurs only when the FE-P is in the negative curvature of the P(VDF-TrFE)'s free energy

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Author

Khoirom Johnson Singh; Nitanshu Chauhan; Anand Bulusu; Sudeb Dasgupta

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Published

2022

Language

EN

Field

Engineering (Physical Sciences)