About this scholarly article

1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers - Channel mobility of GeSi quantum-well P-MOSFETs by Nayak, D.K.; Woo, J.C.S.; Park, J.S.; Wang, K.L.; MacWilliams, K.P. is a scholarly article available to read on EtoBox.

Author

Nayak, D.K.; Woo, J.C.S.; Park, J.S.; Wang, K.L.; MacWilliams, K.P.

Publisher

IEEE

Published

1991

Language

EN