About this scholarly article

International Technical Digest on Electron Devices Meeting - A new band-to-band tunneling model for accurate device simulations of Si MOSFETs by Takayanagi, M.; Iwabuchi, S.; Kobori, T.; Wada, T. is a scholarly article available to read on EtoBox.

Author

Takayanagi, M.; Iwabuchi, S.; Kobori, T.; Wada, T.

Publisher

IEEE

Published

1989

Language

EN