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The document provides product specifications for the 2SB541 silicon PNP power transistor from INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of -120V minimum, maximum power dissipation of 100W at 25°C, and applications in audio frequency power amplifiers up to 50 watts. Absolute maximum ratings include a collector-base voltage of -110V, collector-emitter voltage of -100V, and junction temperature of 150°C. Electrical characteristics are also provided such as collect

Author

jadi purwono

Language

EN