Opening book details…
About this Biochemistry, Genetics and Molecular Biology article
Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory by Heo, Kwan-Jun; Kim, Han-Sang; Lee, Jae-Yun; Kim, Sung-Jin is a Biochemistry, Genetics and Molecular Biology article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Biochemistry, Genetics and Molecular Biology.
- Author
- Heo, Kwan-Jun; Kim, Han-Sang; Lee, Jae-Yun; Kim, Sung-Jin
- Publisher
- Springer Science and Business Media LLC; London: Nature Publishing Group; [London]: Springer Nature; Nature Publishing Group; Society for Mining, Metallurgy and Exploration Inc.; Research Square; Springer Nature; Island Press (ISSN 2045-2322)
- Published
- 2020
- Field
- Biochemistry, Genetics and Molecular Biology (Life Sciences)
More by Heo, Kwan-Jun; Kim, Han-Sang; Lee, Jae-Yun; Kim, Sung-Jin
Browse all works by Heo, Kwan-Jun; Kim, Han-Sang; Lee, Jae-Yun; Kim, Sung-Jin