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Can I read Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits on EtoBox?
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits by Brian R. Bennett; Mario G. Ancona; James G. Champlain; Nicolas A. Papanicolaou; J. Brad Boos is a Engineering article available to read on EtoBox.
What is Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits about?
Heterostructures consisting of an InGaSb quantum well situated between AlGaSb barriers were grown by molecular beam epitaxy. Calculations indicate a type-I band structure with substantial valence and conduction band offsets that can allow for the confinement of either electrons or holes in the InGaSb. Quantum wells with n-type conduction were achieved using modulation doping, with Te located in the barrier above the quantum well. A set of barrier layers was found which resulted in a sample with an In 0.2 Ga 0.8 Sb quantum well that exhibited an electron mobility of 3900 cm 2 /V s as grown. After removal of upper barrier layers including the Te by selective etching, the conductivity switched to p-type, with hole mobilities near 800 cm 2 /V s. This design could allow the integration of low-power n-and p-channel field-effect transistors for complementary logic applications.
Who reads Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Brian R. Bennett; Mario G. Ancona; James G. Champlain; Nicolas A. Papanicolaou; J. Brad Boos
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)